Display device and electronic apparatus

ABSTRACT

To provide a display device and an electronic apparatus that suppress leakage of a drive current between adjacent light emitting elements. A display device includes: a plurality of light emitting elements having an organic light emitting layer sandwiched between a first electrode disposed for each of the light emitting elements and a second electrode in a lamination direction and arrayed on a plane; and an insulating layer disposed between the first electrodes. At least a part of a film thickness region in the insulating layer contains a positively charged inorganic nitride.

TECHNICAL FIELD

The present disclosure relates to a display device and an electronicapparatus.

BACKGROUND ART

In recent years, in a display device for use in a mobile device, ademand for higher definition and lower power consumption has increased.

For example, a display device using an organic electroluminescentelement (organic electro-luminescence diode: OLED) disclosed in PatentDocument 1 described below is self-luminous and has low powerconsumption, and therefore an application thereof for use in a mobiledevice has been expected.

However, in such an organic electroluminescent element, an organic lightemitting layer is disposed in common to all light emitting elements, andtherefore leakage of a drive current is likely to occur between adjacentlight emitting elements. Therefore, for example, Patent Document 2described below discloses a technique for suppressing leakage of a drivecurrent occurring between adjacent light emitting elements by increasingresistance of a highly conductive layer (for example, a hole injectionlayer and a hole transport layer) in an organic light emitting layer ina region between light emitting elements.

CITATION LIST Patent Document

-   Patent Document 1: Japanese Patent Application Laid-Open No.    2015-149194-   Patent Document 2: Japanese Patent Application Laid-Open No.    2012-216338

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

However, with the technique disclosed in Patent Document 2 describedabove, it is difficult to sufficiently eliminate a highly conductivepath that leaks a drive current in the organic light emitting layer.Therefore, in the display device disclosed in Patent Document 2described above, it is difficult to sufficiently suppress leakage of adrive current between adjacent light emitting elements.

Therefore, the present disclosure proposes a novel and improved displaydevice and electronic apparatus capable of further suppressing leakageof a drive current occurring between adjacent light emitting elements.

Solutions to Problems

The present disclosure provides a display device including: a pluralityof light emitting elements having an organic light emitting layersandwiched between a first electrode disposed for each of the lightemitting elements and a second electrode in a lamination direction andarrayed on a plane; and an insulating layer disposed between the firstelectrodes, in which at least a part of a film thickness region in theinsulating layer contains a positively charged inorganic nitride.

Furthermore, the present disclosure provides an electronic apparatusincluding a display unit including: a plurality of light emittingelements having an organic light emitting layer sandwiched between afirst electrode disposed for each of the light emitting elements and asecond electrode in a lamination direction and arrayed on a plane; andan insulating layer disposed between the first electrodes, in which atleast a part of a film thickness region in the insulating layer containsa positively charged inorganic nitride.

The present disclosure can suppress generation of a highly conductivepath that leaks a drive current in an organic light emitting layer.

Effects of the Invention

As described above, the present disclosure can suppress leakage of adrive current occurring between adjacent light emitting elements in adisplay device.

Note that the above effect is not necessarily limited. Any one ofeffects described in the present specification or another effect thatcan be grasped from the present specification may be exhibited togetherwith the above effect or in place of the above effect.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross-sectional view of a display device according to afirst embodiment of the present disclosure, cut in a laminationdirection.

FIG. 2 is a cross-sectional view for explaining leakage of a drivecurrent in an organic light emitting layer.

FIG. 3 is a cross-sectional view illustrating one step of a method formanufacturing the display device according to the first embodiment.

FIG. 4 is a cross-sectional view illustrating one step of the method formanufacturing the display device according to the first embodiment.

FIG. 5 is a cross-sectional view illustrating one step of the method formanufacturing the display device according to the first embodiment.

FIG. 6 is a cross-sectional view illustrating one step of the method formanufacturing the display device according to the first embodiment.

FIG. 7 is a cross-sectional view illustrating one step of the method formanufacturing the display device according to the first embodiment.

FIG. 8 is a cross-sectional view of a display device according to asecond embodiment of the present disclosure, cut in a laminationdirection.

FIG. 9 is a cross-sectional view illustrating one step of a method formanufacturing the display device according to the second embodiment.

FIG. 10 is a cross-sectional view illustrating one step of the methodfor manufacturing the display device according to the second embodiment.

FIG. 11 is a cross-sectional view illustrating one step of the methodfor manufacturing the display device according to the second embodiment.

FIG. 12 is a cross-sectional view illustrating one step of the methodfor manufacturing the display device according to the second embodiment.

FIG. 13 is a cross-sectional view illustrating one step of the methodfor manufacturing the display device according to the second embodiment.

FIG. 14 is a cross-sectional view illustrating one step of the methodfor manufacturing the display device according to the second embodiment.

FIG. 15 is a cross-sectional view illustrating one step of the methodfor manufacturing the display device according to the second embodiment.

FIG. 16 is a cross-sectional view of a display device according to afirst modification of the second embodiment, cut in a laminationdirection.

FIG. 17 is a cross-sectional view of a display device according to asecond modification of the second embodiment, cut in a laminationdirection.

FIG. 18 is a cross-sectional view of a display device according to athird modification of the second embodiment, cut in a laminationdirection.

FIG. 19 is an external view illustrating an example of an electronicapparatus to which the display device according to either one of theembodiments of the present disclosure can be applied.

FIG. 20 is an external view illustrating another example of theelectronic apparatus to which the display device according to either oneof the embodiments of the present disclosure can be applied.

FIG. 21 is an external view illustrating another example of theelectronic apparatus to which the display device according to either oneof the embodiments of the present disclosure can be applied.

FIG. 22 is an external view illustrating another example of theelectronic apparatus to which the display device according to either oneof the embodiments of the present disclosure can be applied.

MODE FOR CARRYING OUT THE INVENTION

Preferable embodiments of the present disclosure will be described indetail below with reference to the accompanying drawings. Note that inthe present specification and the drawings, the same reference numeralsare given to constituent elements having substantially the samefunctional configuration, and redundant explanation is omitted.

Note that the description will be made in the following order.

1. First embodiment

1.1. Configuration of display device

1.2. Method for manufacturing display device

2. Second embodiment

2.1. Configuration of display device

2.2. Method for manufacturing display device

2.3. Modification

3. Application example of display device

<1. First Embodiment>

[1.1. Configuration of Display Device]

First, with reference to FIG. 1, a configuration of a display deviceaccording to a first embodiment of the present disclosure will bedescribed. FIG. 1 is a cross-sectional view of the display deviceaccording to the first embodiment of the present disclosure, cut in alamination direction.

The display device according to the present embodiment is a displaydevice that displays an image or the like, for example, by controllinglight emission of each of a plurality of light emitting elements arrayedon a plane. Each of the plurality of light emitting elements arrayed ona plane constitutes, for example, any one of red, green, and bluesub-pixels, and these three sub-pixels constitute one pixel (in otherwords, one pixel). The display device according to the presentembodiment can control the color of each pixel by controlling lightemission of the three sub-pixels constituting a pixel, and can displayan image based on an image signal.

Note that, in the display device according to the present embodiment,any configuration can be used as a drive circuit that controls lightemission of each of the light emitting elements, a power supply circuitthat supplies power to the light emitting elements, or the like.Therefore, these configurations are not illustrated below.

As illustrated in FIG. 1, the display device according to the presentembodiment includes a substrate 100, a contact plug 111 disposed insidethe substrate 100, a first electrode 110 disposed on the substrate 100for each of light emitting elements, an insulating layer 120 disposedbetween the first electrodes 110, an organic light emitting layer 130disposed on the first electrode 110 and the insulating layer 120, asecond electrode 140 disposed on the organic light emitting layer 130, aprotective layer 150 disposed on the second electrode 140, and a colorfilter 161 and a shielding layer 163 disposed on the protective layer150. In other words, the display device according to the presentembodiment may be a top emission type display device that extracts lightemitted by the light emitting elements from the protective layer 150side.

The substrate 100 is a support that supports a plurality of lightemitting elements arrayed on one main surface. Furthermore, although notillustrated, on the substrate 100, a drive circuit including a samplingtransistor and a drive transistor that control driving of the lightemitting elements, and a power supply circuit that supplies power to thelight emitting elements may be disposed.

The substrate 100 may be constituted by, for example, a glass or a resinhaving low moisture and oxygen transmittance, or may be constituted by asemiconductor that easily forms a transistor or the like. Specifically,the substrate 100 may be a glass substrate such as a high strain pointglass, a soda glass, a borosilicate glass, forsterite, a lead glass, ora quartz glass, a semiconductor substrate such as an amorphous siliconor a polycrystalline silicon, or a resin substrate such as polymethylmethacrylate, polyvinyl alcohol, polyvinyl phenol, polyether sulfone,polyimide, polycarbonate, polyethylene terephthalate, or polyethylenenaphthalate.

The contact plug 111 electrically connects the first electrode 110 to adrive circuit, a power supply circuit, and the like. Specifically, thecontact plug 111 electrically connects the first electrode 110 to adrive circuit, a power supply circuit, and the like (not illustrated)disposed inside the substrate 100, and applies power for light emissionof the light emitting elements to the first electrode 110. The contactplug 111 may contain, for example, a single metal such as chromium (Cr),gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo),tungsten (W), titanium (Ti), tantalum (Ta), aluminum (Al), iron (Fe), orsilver (Ag), or an alloy thereof, or may be formed by laminating aplurality of films of these metals.

The first electrode 110 is disposed on the substrate 100 for each of thelight emitting elements, and functions as an anode of each of the lightemitting elements. Specifically, the first electrode 110 may be formedas a light reflecting electrode with a material having a high lightreflectance and a large work function. For example, the first electrode110 may contain a single metal such as Cr, Au, Pt, Ni, Cu, Mo, W, Ti,Ta, Al, Fe, or Ag, or an alloy thereof, or may be formed by laminating aplurality of films of these metals.

Furthermore, the first electrode 110 may be formed as a transparentelectrode with a transparent conductive material such as indium zincoxide or indium tin oxide. In such a case, between the first electrode110 and the substrate 100, a light reflecting layer containing a singlemetal such as Cr, Au, Pt, Ni, Cu, Mo, W, Ti, Ta, Al, Fe, or Ag, or analloy thereof may be disposed.

The insulating layer 120 is disposed between the adjacent firstelectrodes 110 to separate the light emitting elements from each other.Specifically, the insulating layer 120 may be formed so as to cover aside surface of the first electrode 110 in order not to expose the sidesurface of the first electrode 110.

On the side surface of the first electrode 110, the film thickness ofthe organic light emitting layer 130 tends to be thin. Therefore, adrive voltage tends to be applied locally thereto, and abnormal lightemission tends to occur. Furthermore, in a case where the firstelectrode 110 is formed as a laminated film of a plurality of metalfilms, the metal films have different work functions from one another.Therefore, the side surface of the first electrode 110 where each of themetal films is exposed tends to cause abnormal light emission.Therefore, by covering the side surface of the first electrode 110 withthe insulating layer 120, it is possible to prevent occurrence ofabnormal light emission.

Furthermore, at least a part of a film thickness region in theinsulating layer 120 contains an inorganic nitride and is positivelycharged. More specifically, at least a part of a film thickness regionin the insulating layer 120 may contain an inorganic nitride containingno oxygen atom. As a result, as described later, the insulating layer120 can suppress generation of a highly conductive path that causesleakage of a drive current in the organic light emitting layer 130.

Here, in the organic light emitting layer 130, a mechanism in which ahighly conductive path causing leakage of a drive current is generatedwill be described with reference to FIG. 2. FIG. 2 is a cross-sectionalview for explaining leakage of a drive current in the organic lightemitting layer 130.

In FIG. 2, the insulating layer 121 contains, for example, an inorganicoxide (for example, silicon oxide) which is a general insulatingmaterial. In such an insulating layer 121, hydrogen is bonded tounstable oxygen contained in the inorganic oxide to generate a hydroxygroup. Since the hydroxy group has a negative charge, many hydroxygroups formed in the insulating layer 121 negatively charge theinsulating layer 121. As a result, the negatively charged insulatinglayer 121 attracts a hole having a positive charge to an interface ofthe organic light emitting layer 130 in contact with the insulatinglayer 121.

Meanwhile, the organic light emitting layer 130 on a side in contactwith the insulating layer 121 is, for example, a hole transport layer,and has a high hole mobility. Therefore, holes attracted by thenegatively charged insulating layer 121 and accumulated easily form ahighly conductive path at the interface of the organic light emittinglayer 130 in contact with the insulating layer 121. Therefore, in a casewhere the insulating layer 121 contains an inorganic oxide, a drivecurrent applied to the first electrode 110 passes through a path formedat the interface of the organic light emitting layer 130 in contact withthe insulating layer 121 and easily leaks to the first electrode 110 ofan adjacent light emitting element.

In particular, an inorganic oxide film formed using low-temperatureplasma is relatively weak in bonding between atoms and easily generatesa defect, and therefore easily generates unstable oxygen to form ahydroxy group. Therefore, in a case where the insulating layer 121 isformed by chemical vapor deposition (CVD) using low-temperature plasma,atomic layer deposition (ALD), or the like, a highly conductive path iseasily formed, and leakage of a drive current easily occurs at theinterface of the organic light emitting layer 130.

In the display device according to the present embodiment, asillustrated in FIG. 1, the insulating layer 120 contains an inorganicnitride and is positively charged. Therefore, a hole is not attracted tothe interface of the organic light emitting layer 130 in contact withthe insulating layer 120. Therefore, a path through which a leak currentflows is hardly formed in the organic light emitting layer 130 incontact with the insulating layer 120. Therefore, the display deviceaccording to the present embodiment can prevent leakage of a drivecurrent between the first electrodes 110.

This is because bond energy between atoms in an inorganic nitride ishigher than bond energy between atoms in an inorganic oxide, and theinsulating layer 120 containing an inorganic nitride hardly generates adefect in an atomic bond that is a basis for generating a hydroxy group,for example. Furthermore, another reason is that the insulating layer120 containing an inorganic nitride does not contain oxygen and hardlygenerates a hydroxy group. Therefore, by using an inorganic nitride, itis possible to form the insulating layer 120 not negatively charged butpositively charged.

Specifically, the insulating layer 120 can contain silicon nitride(SiN_(x)) or the like. Furthermore, in order to charge the insulatinglayer 120 more positively, a ratio of Si—H/N—H of a silicon nitrideforming the insulating layer 120 may be less than 1%.

A film of silicon nitride is formed, for example, by reacting aSi-containing gas (for example, SiH₄) and a N-containing gas (forexample, NH₃) by CVD or the like. Therefore, the silicon nitride filmcontains a hydrogen atom contained in the source gases. At this time, asthe ratio of Si—H/N—H is smaller and the amount of hydrogen atomscontained in the silicon nitride film is smaller, a hydroxyl group isless likely to be generated. Therefore, by using silicon nitride inwhich the ratio of Si—H/N—H is less than 1%, it is possible to form theinsulating layer 120 more strongly positively charged. Such aninsulating layer 120 with a small content of hydrogen atoms can beformed, for example, by controlling a flow rate of source gases suchthat the number of hydrogen atoms contained in the source gases in CVDis small.

Note that the method for forming the insulating layer 120 that ispositively charged and does not attract a hole to the interface with theorganic light emitting layer 130 is not limited to the method describedabove. For example, the positively charged insulating layer 120 can alsobe formed by doping a layer containing an insulating material other thanan inorganic nitride with a nitrogen atom, a fluorine atom, or the like.

Moreover, the insulating layer 120 may be formed, for example, as amultilayer laminated film with a plurality of insulating films. In sucha case, at least one of the plurality of insulating films constitutingthe insulating layer 120 is formed as a film positively charged with aninorganic nitride.

For example, the insulating layer 120 may be formed as a multilayer filmobtained by laminating a film containing an inorganic nitride and a filmcontaining an inorganic oxide from the substrate 100 side. In such acase, even if the film containing an inorganic oxide is in contact withthe organic light emitting layer 130, the film containing an inorganicnitride is positively charged, and therefore can cancel a negativecharge generated in the film containing an inorganic oxide. As a result,the film containing an inorganic nitride can prevent the entireinsulating layer 120 from being negatively charged, and therefore canprevent generation of a highly conductive path in the organic lightemitting layer 130.

However, the film containing an inorganic nitride may be disposed on aside of the insulating layer 120 in contact with the organic lightemitting layer 130. In such a case, the film containing an inorganicnitride can positively charge a surface of the insulating layer 120, andtherefore can reliably suppress generation of a highly conductive pathat an interface of the organic light emitting layer 130 in contact withthe insulating layer 120.

As described above, in a case where the insulating layer 120 isconstituted by a plurality of insulating films, characteristics requiredas the insulating layer 120 can be controlled for each of the insulatingfilms. For example, it is possible to select each of the plurality ofinsulating films constituting the insulating layer 120 in considerationof stability of an interface between the organic light emitting layer130 and the insulating layer 120 and an interface between the substrate100 and the insulating layer 120. Furthermore, when the insulating layer120 is patterned using etching or the like, by constituting theinsulating layer 120 by a plurality of insulating films having differentetching resistances, progress of etching can be easily controlled.Therefore, in a case where the insulating layer 120 is constituted by aplurality of insulating films, productivity of the display device canalso be improved.

The organic light emitting layer 130 contains an organic light emittingmaterial, and is disposed on the first electrode 110 and the insulatinglayer 120 as a continuous film common to all the light emittingelements. Furthermore, the organic light emitting layer 130 emits lightby application of an electric field between the first electrode 110 andthe second electrode 140.

Specifically, in a case where an electric field is applied, into theorganic light emitting layer 130, a hole is injected from the firstelectrode 110, and an electron is injected from the second electrode140. The injected hole and electron recombine in the organic lightemitting layer 130 to form an exciton, and energy of the exciton excitesan organic light emitting material to generate fluorescence orphosphorescence from the organic light emitting material.

Here, the organic light emitting layer 130 may have a multilayerstructure obtained by laminating a plurality of functional layers. Forexample, the organic light emitting layer 130 may have a structureformed by sequentially laminating a hole injection layer, a holetransport layer, a light emitting layer, an electron transport layer,and an electron injection layer from the first electrode 110 side.Furthermore, the organic light emitting layer 130 may have a so-calledtandem structure in which a plurality of light emitting layers isconnected to one another via a charge generation layer or anintermediate electrode.

The hole injection layer and the hole transport layer are layers thatcontain a hole transport material and enhance injection efficiency of ahole from the first electrode 110.

Examples of the hole transport material include benzine, styrylamine,triphenylamine, porphyrin, triphenylene, azatriphenylene,tetracyanoquinodimethane, triazole, imidazole, oxadiazole,polyarylalkane, phenylenediamine, arylamine, oxazole, anthracene,fluorenone, hydrazone, stilbene, and derivatives thereof.

Specific examples of the hole transport material includeα-naphthylphenylphenylenediamine (α-NPD), porphyrin, metaltetraphenylporphyrin, metal naphthalocyanine, hexacyanoazatriphenylene(HAT), 7,7,8,8-tetracyanoquinodimethane (TCNQ),7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (F4-TCNQ),tetracyano 4,4,4-tris(3-methylphenylphenylamino) triphenylamine,N,N,N′,N′-tetrakis(p-tolyl) p-phenylenediamine,N,N,N′,N′-tetraphenyl-4,4′-diaminobiphenyl, N-phenylcarbazole, and4-di-p-tolylamino stilbene.

The light emitting layer is a layer that contains at least one or moreof a hole transport material, an electron transport material, or a bothcharge transport material as host materials, and a fluorescent orphosphorescent organic light emitting material as a dopant material, andconverts electric energy into light energy.

Examples of the host material include a styryl derivative, an anthracenederivative, a naphthacene derivative, a carbazole derivative, anaromatic amine derivative, a phenanthroline derivative, a triazolederivative, a quinolinolato-based metal complex, and a phenanthrolinederivative.

Furthermore, examples of the dopant material (organic light emittingmaterial) include a known fluorescent material and phosphorescentmaterial. Examples of the known fluorescent material include a dyematerial such as a styryl benzene-based dye, an oxazole-based dye, aperylene-based dye, a coumarin-based dye, or an acridine-based dye, apolyaromatic hydrocarbon-based material such as an anthracenederivative, a naphthacene derivative, a pentacene derivative, or achrysene derivative, a pyrromethene skeleton material, aquinacridone-based derivative, a cyanomethylenepyran-based derivative, abenzothiazole-based derivative, a benzimidazole-based derivative, and ametal chelated oxinoid compound. Furthermore, examples of the knownphosphorescent material include an organometallic complex containing atleast one metal selected from the group consisting of ruthenium (Ru),rhodium (Rh), palladium (Pd), silver (Ag), rhenium (Re), osmium (Os),iridium (Ir), platinum (Pt), and gold (Au). Specific examples of thephosphorescent material include a complex having a noble metal elementsuch as Ir as a central metal, such as Ir(ppy)₃, a complex such asIr(bt)₂·acac₃, and a complex such as PtOEt₃.

Furthermore, the light emitting layer may emit light corresponding toeach color of the display device in place of white. For example, a redlight emitting layer that emits red light can be formed by mixing 30% bymass of 2,6-bis[(4′-methoxydiphenylamino) styryl]-1,5-dicyanonaphthalene(BSN) with 4,4-bis(2,2-diphenylvinin) biphenyl (DPVBi) Furthermore, agreen light emitting layer that emits green light can be formed bymixing 5% by mass of coumarin 6 with DPVBi. Moreover, a blue lightemitting layer that emits blue light can be formed by mixing 2.5% bymass of 4,4′-bis[2-{4-(N,N-diphenylamino) phenyl} vinyl] biphenyl(DPAVBi) with DPVBi.

The electron transport layer is a layer that contains an electrontransport material and enhances injection efficiency of an electron fromthe second electrode 140.

Examples of the electron transport material includetris(8-quinolinolato) aluminum (Alq₃) and a compound having anitrogen-containing aromatic ring. Specific examples of the electrontransport material include the above tris(8-quinolinolato) aluminum(Alq₃), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), andbathophenanthroline (Bphen). Note that the electron transport layer maybe constituted by a plurality of layers. In a case where the electrontransport layer is constituted by a plurality of layers, the electrontransport layer may contain a layer further doped with an alkali metalelement or an alkaline earth metal element.

The electron injection layer is a layer that enhances injectionefficiency of an electron from the second electrode 140. The electroninjection layer may contain, for example, lithium fluoride (LiF), sodiumchloride (NaCl), cesium fluoride (CsF), lithium oxide (Li₂O), or bariumoxide (BaO).

The second electrode 140 functions as a cathode of the light emittingelements, and is disposed on the organic light emitting layer 130 as acontinuous film common to all the light emitting elements. Specifically,the second electrode 140 may be formed as a light transmitting electrodewith a material having high light transmittance and a small workfunction. For example, the second electrode 140 may contain atransparent conductive material such as indium tin oxide, indium zincoxide, zinc oxide, aluminum-doped zinc oxide, or gallium-doped zincoxide, and may be formed as a thin film having a thin thickness (forexample, 30 nm or less) to a degree to which light transmits with analloy of a metal such as aluminum (Al), magnesium (Mg), silver (Ag),calcium (Ca), or sodium (Na). Furthermore, the second electrode 140 maybe formed by laminating a plurality of films containing the above metalor alloy.

The protective layer 150 is disposed on the second electrode 140 toprevent moisture and oxygen from entering the organic light emittinglayer 130. Furthermore, the protective layer 150 improves the mechanicalstrength of the display device. Specifically, the protective layer 150may contain a material having high light transmittance and low watertransmittance. For example, the protective layer 150 may contain siliconoxide (SiO_(x)), silicon nitride (SiN_(x)), aluminum oxide (AlO_(x)), ora combination thereof.

The color filter 161 and the shielding layer 163 define a pixel or asub-pixel of the display device. For example, the color filter 161 maybe a red filter, a green filter, or a blue filter. The color filter 161can divide light emitted from the light emitting elements by color andextract the light. The color filter 161 may contain, for example, aresin containing a pigment or a dye.

Furthermore, the shielding layer 163 is a so-called black matrix, and ispatterned in a matrix in accordance with arrangement of pixels orsub-pixels of the display device. The shielding layer 163 can improvecontrast of the display device by shielding unnecessary external lightor the like reflected by wiring or the like between pixels orsub-pixels. The shielding layer 163 may contain, for example, a blackmaterial such as chromium (Cr) or graphite.

As described above, in the display device according to the presentembodiment, by disposing the insulating layer 120 in which a part of thefilm thickness region is positively charged, it is possible to suppressformation of a path in which the conductivity is increased byaccumulating holes in the organic light emitting layer 130. Therefore,the display device according to the present embodiment can suppressoccurrence of leakage of a drive current between the first electrodes110 of adjacent light emitting elements.

[1.2. Method for Manufacturing Display Device]

Subsequently, a method for manufacturing the display device according tothe present embodiment will be described with reference to FIGS. 3 to 7.FIGS. 3 to 7 are cross-sectional views illustrating steps of the methodfor manufacturing the display device according to the presentembodiment.

First, as illustrated in FIG. 3, the substrate 100 in which a drivecircuit (not illustrated), a power supply circuit (not illustrated), andthe contact plug 111 electrically connected to these circuits are formedis prepared. For example, the substrate 100 may be a silicon substratethat easily forms a transistor or the like.

Next, as illustrated in FIG. 4, the first electrode 110 is formed foreach of the light emitting elements on the substrate 100 so as to beconnected to the contact plug 111 using sputtering or the like. Forexample, the first electrode 110 may contain an aluminum copper alloy(AlCu), or may be constituted by a multilayer film obtained bysequentially laminating an aluminum copper alloy (AlCu) and indium tinoxide from the substrate 100 side.

At this time, a region between the first electrodes 110 of the lightemitting elements may be dug by etching or the like. As a result, thefirst electrodes 110 are more reliably separated from one another, andtherefore separation performance of each of the light emitting elementscan be improved.

Subsequently, as illustrated in FIG. 5, the insulating layer 120 isformed between the first electrodes 110 using CVD or the like.Specifically, the insulating layer 120 is first formed on the entiresurface of the substrate 100, and then an opening is formed usingetching or the like such that an upper surface of the first electrode110 is exposed. As a result, the insulating layer 120 can be formed soas to cover a side surface of the first electrode 110.

Here, in a case where the first electrode 110 contains a transparentconductive material such as indium tin oxide, it may be difficult toremove an organic substance such as a resist from a top of the indiumtin oxide after etching. Therefore, in such a case, after etching of theinsulating layer 120 proceeds halfway, by removing a resist and thenetching (so-called etching back) the entire surface uniformly, theinsulating layer 120 may be patterned. In a case where it is required toprecisely control the progress of etching as described above, theinsulating layer 120 may be formed as a multilayer film obtained bylaminating a plurality of insulating films having different etchingresistances

For example, the insulating layer 120 may be constituted by a singlelayer of silicon nitride (SiN_(x)), or may be constituted by a laminatedfilm of silicon oxide (SiO_(x)) and silicon nitride (SiN_(x)). In a casewhere the insulating layer 120 is constituted by a laminated film ofsilicon oxide and silicon nitride, either film may be in contact withthe organic light emitting layer 130. However, in order to furthersuppress leakage of a drive current, a film containing silicon nitrideis desirably in contact with the organic light emitting layer 130.

Subsequently, as illustrated in FIG. 6, the organic light emitting layer130 and the second electrode 140 are sequentially formed on the entiresurface of the first electrode 110 and the insulating layer 120. Forexample, the organic light emitting layer 130 may be formed bysequentially forming a hole injection layer, a hole transport layer, alight emitting layer, an electron transport layer, a light emittinglayer, an electron transport layer, and an electron injection layer fromthe first electrode 110 side using a vacuum vapor deposition method orthe like. For example, the materials described above can be used formaterials of the layers constituting the organic light emitting layer130. Furthermore, the second electrode 140 may also be formed by forminga film of a transparent conductive material such as indium zinc oxide orindium tin oxide using sputtering or the like.

Next, as illustrated in FIG. 7, the protective layer 150 is formed onthe second electrode 140 using CVD or the like. For example, theprotective layer 150 may contain silicon oxide (SiO_(x)), siliconnitride (SiN_(x)), or silicon oxynitride (SiON).

Moreover, by performing patterning using photolithography or the like,the color filter 161 and the shielding layer 163 are formed on theprotective layer 150. Specifically, first, the shielding layer 163 isformed on the entire surface of the protective layer 150, and thenpatterning is performed for each pixel or sub-pixel usingphotolithography or the like to form an opening in the shielding layer163. Thereafter, by forming the color filter 161 corresponding to eachcolor in the opening of the shielding layer 163, the color filter 161and the shielding layer 163 can be formed.

The display device according to the present embodiment can bemanufactured through the above steps. Note that the above manufacturingmethod is merely an example, and the method for manufacturing thedisplay device according to the present embodiment is not limited to theabove.

<2. Second Embodiment>

[2.1. Configuration of Display Device]

Next, with reference to FIG. 8, a configuration of a display deviceaccording to a second embodiment of the present disclosure will bedescribed. FIG. 8 is a cross-sectional view of the display deviceaccording to the second embodiment of the present disclosure, cut in alamination direction.

As illustrated in FIG. 8, the display device according to the presentembodiment includes a substrate 200, a first electrode 210 disposed onthe substrate 200, a first member 270 forming a recess structure havingthe first electrode 210 as a bottom, an insulating layer 220 disposedalong the first member 270, an organic light emitting layer 230 disposedon the first electrode 210 and the insulating layer 220, a secondelectrode 240 disposed on the organic light emitting layer 230, aprotective layer 250 disposed on the second electrode 240, a secondmember 280 disposed on the protective layer 250 and having the recessstructure embedded therein, and a color filter 260 disposed on thesecond member 280.

In other words, in the display device according to the presentembodiment, a light emitting element is formed inside the recessstructure having the first electrode 210 as a bottom and having thefirst member 270 disposed between the light emitting elements as a sidewall. Furthermore, in the display device according to the presentembodiment, the recess structure having a light emitting element thereinis embedded by the second member 280 having a larger refractive indexthan the first member 270. As a result, the first member 270 and thesecond member 280 can function as a light reflecting portion thatreflects incident light because a magnitude relationship of therefractive index satisfies the condition of total reflection. Therefore,the display device according to the present embodiment can improve thelight extraction efficiency from a light emitting element by forming thelight emitting element inside the recess structure and causing a sidewall of the recess structure to function as a light reflecting portion.

Note that among the components illustrated in FIG. 8, description of aspecific material of a component having the same name as each of thecomponents illustrated in FIG. 1 is substantially similar to that inFIG. 1, and therefore detailed description thereof is omitted here.

The substrate 200 is a support that supports a plurality of lightemitting elements arrayed on one main surface. Although not illustrated,on the substrate 200, a drive circuit that controls driving of the lightemitting elements, a power supply circuit that supplies power to thelight emitting elements, and a contact plug that electrically connectsthese circuits to the first electrode 210 may be disposed.

The first electrode 210 is disposed on the substrate 200 for each of thelight emitting elements, and functions as an anode of each of the lightemitting elements. Furthermore, the first electrode 210 is disposed at abottom of the recess structure having the first member 270 as a sidewall. Specifically, the first electrode 210 may be formed as a lightreflecting electrode with a material having a high light reflectance anda large work function.

The first member 270 is disposed between the light emitting elements onthe substrate 200 to separate the light emitting elements from eachother. Specifically, the first member 270 is formed around the firstelectrode 210 in a substantially trapezoidal shape (in other words, atapered shape) having an inclined portion. As a result, the first member270 can form a recess structure (in other words, an inversely taperedshape) having the first electrode 210 as a bottom and having theopposite side to the substrate 200 open. The first member 270 maycontain a low refractive index material having a smaller refractiveindex than the second member 280. The first member 270 may be formed by,for example, an organic insulating film such as a polyimide-based resin,an acrylic resin, or a novolac-based resin, or an inorganic insulatingfilm such as silicon oxide (SiO_(x)), silicon nitride (SiN_(x)), orsilicon oxynitride (SiON).

The insulating layer 220 is disposed along the first member 270 betweenthe adjacent first electrodes 210. Furthermore, at least a part of afilm thickness region in the insulating layer 220 contains a positivelycharged inorganic nitride. As a result, the insulating layer 220 cansuppress generation of a highly conductive path in the organic lightemitting layer 230, and therefore can suppress leakage of a drivecurrent.

The organic light emitting layer 230 contains an organic light emittingmaterial, and is disposed on the first electrode 210 and the insulatinglayer 220 along the recess structure as a continuous film common to allthe light emitting elements. For example, the organic light emittinglayer 230 may have a structure in which a hole injection layer, a holetransport layer, a light emitting layer, an electron transport layer,and an electron injection layer are sequentially laminated from thefirst electrode 210 side.

The second electrode 240 functions as a cathode of the light emittingelements, and is disposed on the organic light emitting layer 230 alongthe recess structure as a continuous film common to all the lightemitting elements. Specifically, the second electrode 240 may be formedas a light transmitting electrode with a material having high lighttransmittance and a small work function.

The protective layer 250 is disposed on the second electrode 240 toprevent moisture and oxygen from entering the organic light emittinglayer 230. Furthermore, in order to increase the light reflectingefficiency of the protective layer 250 due to a difference in refractiveindex between the first member 270 and the second member 280, at leastthe refractive index of the protective layer 250 on a side in contactwith the second member 280 is desirably large. For example, theprotective layer 250 may be formed by a multilayer film obtained bysequentially laminating a layer containing silicon nitride (SiN_(x)) orsilicon oxide (SiO_(x)) and a laminated film containing AlO_(x) andTiO_(x) having a large refractive index from the second electrode 240side.

The second member 280 is disposed on the protective layer 250 so as toembed the recess structure formed by the first member 270. The secondmember 280 contains a high refractive index material having a refractiveindex larger than the first member 270. The second member 280 may beformed by, for example, a transparent organic insulating film such as apolyimide-based resin, an acrylic resin, or a novolac-based resin, or atransparent inorganic insulating film such as silicon oxide (SiO_(x)),silicon nitride (SiN_(x)), or silicon oxynitride (SiON). As a result,the first member 270 and the second member 280 can function as a lightreflecting portion that reflects light emitted from the light emittingelements, and therefore can improve the light extraction efficiency ofthe light emitting elements.

Note that the second member 280 having a larger refractive index can beformed, for example, by using a resin containing many substituentshaving high molecular refraction, such as a sulfur-containingsubstituent, a phosphorus-containing substituent, or an aromatic ring,in a molecular structure thereof. Furthermore, the second member 280having a larger refractive index can also be formed by incorporating ahigh refractive index inorganic filler such as TiO_(x) or ZrO_(x) intothe second member 280.

The color filter 260 defines the color of a pixel or sub-pixel of thedisplay device. For example, the color filter 260 may be a red filter, agreen filter, or a blue filter. The color filter 260 can divide lightemitted from the light emitting elements by color and extract the light.Note that a shielding layer which is a black matrix may be disposed inplace of the color filter 260 in a region other than the pixels.

As described above, the display device according to the presentembodiment can improve the light extraction efficiency of a lightemitting element by forming the light emitting element inside the recessstructure and causing a side wall of the recess structure to function asa light reflecting portion. Furthermore, even in such a case, bydisposing the insulating layer 220 positively charged by an inorganicnitride along the first member 270 between the adjacent first electrodes210, it is possible to suppress occurrence of leakage of a drive currentbetween the first electrodes 210 of adjacent light emitting elements.

[2.2. Method for Manufacturing Display Device]

Next, a method for manufacturing the display device according to thepresent embodiment will be described with reference to FIGS. 9 to 15.FIGS. 9 to 15 are cross-sectional views illustrating steps of the methodfor manufacturing the display device according to the presentembodiment.

First, as illustrated in FIG. 9, the first electrode 210 is formed usingsputtering or the like on the substrate 200 in which a drive circuit, apower supply circuit, and a contact plug (not illustrated) electricallyconnected to these circuits are formed. For example, the substrate 200may be a silicon substrate that easily forms a transistor or the like.Furthermore, the first electrode 210 may contain an aluminum copperalloy (AlCu), or may be constituted by a multilayer film obtained bysequentially laminating an aluminum copper alloy (AlCu) and indium tinoxide from the substrate 200 side.

Next, as illustrated in FIG. 10, a first member layer 271 is formed onthe substrate 200 and the first electrode 210 using CVD or the like. Thefirst member layer 271 is a layer on which the first member 270 isformed by being patterned by etching in a later stage, and may contain,for example, silicon oxide (SiO_(x)).

Subsequently, as illustrated in FIG. 11, the first member layer 271 ispatterned so as to expose the first electrode 210 using etching or thelike to form the recess structure having the first electrode 210 as abottom and having the first member 270 as a side wall.

Next, as illustrated in FIG. 12, the insulating layer 120 is formedbetween the first electrodes 210 along the first member 270 using CVD orthe like. For example, the insulating layer 220 may contain siliconnitride (SiN_(x)).

Subsequently, as illustrated in FIG. 13, the organic light emittinglayer 230 is formed along the recess structure on the first electrode210 and the insulating layer 220 using a vacuum vapor deposition methodor the like. For example, the organic light emitting layer 230 may beformed by sequentially forming a hole injection layer, a hole transportlayer, a light emitting layer, an electron transport layer, and anelectron injection layer from the first electrode 210 side. Thematerials described above can be used for materials of the layersconstituting the organic light emitting layer 230.

Next, as illustrated in FIG. 14, the second electrode 240 is formed onthe organic light emitting layer 230 using sputtering or the like, andthe protective layer 250 is formed on the second electrode 240. Forexample, the second electrode 240 may be formed by forming a film of atransparent conductive material such as indium zinc oxide or indium tinoxide. Furthermore, the protective layer 250 may be formed, for example,by forming a SiN_(x) film using CVD or the like, and then forming a highrefractive index laminated film of AlO_(x) and TiO_(x) on the SiN_(x)film using ALD or the like.

Subsequently, as illustrated in FIG. 15, the second member 280 is formedon the protective layer 250 so as to embed the recess structure, and thecolor filter 260 is formed on the second member 280. For example, thesecond member 280 can be formed so as to embed the recess structure onthe protective layer 250 by using a spin coating method or the like.Alternatively, by forming the second member 280 on the entire surface ofthe protective layer 250 and then removing the second member 280 otherthan the inside of the recess structure using a photolithography method,the second member 280 can be formed. For example, the second member 280may contain an acrylic resin in which a filler of TiO₂ or ZrO₂ isdispersedly contained.

Furthermore, the color filter 260 is formed on the second member 280 byperforming patterning using photolithography or the like. Specifically,first, a black matrix which is a shielding layer is formed on the entiresurface of the second member 280, and then an opening is formed in theblack matrix using photolithography or the like. Thereafter, by formingany one of a red filter, a green filter, and a blue filter in theopening, the color filter 260 can be formed.

The display device according to the present embodiment can bemanufactured through the above steps. Note that the above manufacturingmethod is merely an example, and the method for manufacturing thedisplay device according to the present embodiment is not limited to theabove.

[2.3. Modification]

Subsequently, modifications of the display device according to thepresent embodiment will be described with reference to FIGS. 16 to 18.These modifications are examples in which a region where the insulatinglayer 220 is formed is different from that in the display deviceillustrated in FIG. 8. Even in the cases of these modifications, thedisplay device according to the present embodiment can suppressoccurrence of leakage of a drive current between adjacent light emittingelements.

(First Modification)

First, a display device according to a first modification of the presentembodiment will be described with reference to FIG. 16. FIG. 16 is across-sectional view of the display device according to the firstmodification, cut in a lamination direction.

As illustrated in FIG. 16, the display device according to the firstmodification is different from the display device illustrated in FIG. 8in that an insulating layer 221 (corresponding to the insulating layer220) is not disposed on an inclined portion of the first member 270 butis disposed on a flat portion of the first member 270 outside the recessstructure.

The insulating layer 221 is disposed on the flat portion of the firstmember 270 to electrically separate light emitting elements from eachother. Furthermore, the insulating layer 221 contains an inorganicnitride and is positively charged. As a result, the insulating layer 221can suppress generation of a highly conductive path that causes leakageof a drive current at an interface of the organic light emitting layer230 in contact with the insulating layer 221.

In the display device according to the first modification, the inclinedportion of the first member 270 can be brought into contact with theorganic light emitting layer 230. Therefore, light emitted from theorganic light emitting layer 230 can be reflected more efficiently inthe first member 270 using a difference in refractive index. Meanwhile,the insulating layer 221 can block a highly conductive path generated inthe organic light emitting layer 230 in a region above the flat portionof the first member 270 where the insulating layer 221 is in contactwith the organic light emitting layer 230, and therefore can suppressoccurrence of leakage of a drive current between adjacent light emittingelements.

Therefore, the display device according to the first modification canimprove the light extraction efficiency from a light emitting elementwhile suppressing leakage of a drive current between adjacent lightemitting elements.

(Second Modification)

Next, a display device according to a second modification of the presentembodiment will be described with reference to FIG. 17. FIG. 17 is across-sectional view of the display device according to the secondmodification, cut in a lamination direction.

As illustrated in FIG. 17, the display device according to the secondmodification is different from the display device illustrated in FIG. 8in that a reflective auxiliary layer 224 is disposed between aninsulating layer 223 (corresponding to the insulating layer 220) and theorganic light emitting layer 230.

The insulating layer 223 is disposed along the first member 270 betweenthe first electrodes 210 to electrically separate light emittingelements from each other. Furthermore, the insulating layer 223 containsan inorganic nitride and is positively charged. As a result, theinsulating layer 223 can suppress generation of a highly conductive paththat causes leakage of a drive current at an interface of the organiclight emitting layer 230 in contact with the insulating layer 223.

The reflective auxiliary layer 224 is disposed between the insulatinglayer 223 (corresponding to the insulating layer 220) and the organiclight emitting layer 230 at an inclined portion of the first member 270.Furthermore, the reflective auxiliary layer 224 contains an insulatingmaterial having a smaller refractive index than the organic lightemitting layer 230. In particular, the reflective auxiliary layer 224desirably contains an insulating material having a larger difference inrefractive index from the organic light emitting layer 230. For example,the reflective auxiliary layer 224 may contain silicon oxide (SiO_(x)).

In the display device according to the second modification, thereflective auxiliary layer 224 having a smaller refractive index thanthe organic light emitting layer 230 and a large difference inrefractive index from the organic light emitting layer 230 is disposedin the inclined portion of the first member 270. As a result, thedisplay device according to the second modification can improve thelight extraction efficiency of a light emitting element by reflectinglight emitted from the organic light emitting layer 230 at an interfacebetween the organic light emitting layer 230 and the reflectiveauxiliary layer 224. Meanwhile, the insulating layer 223 can block ahighly conductive path generated in the organic light emitting layer 230in a region above the flat portion of the first member 270 where theinsulating layer 223 is in contact with the organic light emitting layer230, and therefore can suppress occurrence of leakage of a drive currentbetween adjacent light emitting elements.

Therefore, the display device according to the second modification canimprove the light extraction efficiency of a light emitting elementwhile suppressing leakage of a drive current between adjacent lightemitting elements.

(Third Modification)

Next, a display device according to a third modification of the presentembodiment will be described with reference to FIG. 18. FIG. 18 is across-sectional view of the display device according to the thirdmodification, cut in a lamination direction.

As illustrated in FIG. 18, the display device according to the thirdmodification is different from the display device illustrated in FIG. 8in that a reflective auxiliary layer 226 is disposed between aninsulating layer 225 (corresponding to the insulating layer 220) and theorganic light emitting layer 230.

The insulating layer 225 is disposed along the first member 270 betweenthe first electrodes 210 to electrically separate light emittingelements from each other. Furthermore, the insulating layer 225 containsan inorganic nitride and is positively charged. Since the insulatinglayer 225 is not in contact with the organic light emitting layer 230but is positively charged, the insulating layer 225 cancels a negativecharge generated in the reflective auxiliary layer 226 and prevents theentire layer including the insulating layer 225 and the reflectiveauxiliary layer 226 from being negatively charged. Therefore, even insuch a case, the insulating layer 225 can suppress generation of ahighly conductive path that causes leakage of a drive current at aninterface of the organic light emitting layer 130 in contact with thereflective auxiliary layer 226.

The reflective auxiliary layer 226 is disposed between the insulatinglayer 223 (corresponding to the insulating layer 220) and the organiclight emitting layer 230. Furthermore, the reflective auxiliary layer226 contains an insulating material having a smaller refractive indexthan the organic light emitting layer 230. In particular, the reflectiveauxiliary layer 226 desirably contains an insulating material having alarger difference in refractive index from the organic light emittinglayer 230. For example, the reflective auxiliary layer 226 may containsilicon oxide (SiO_(x)).

In the display device according to the third modification, thereflective auxiliary layer 226 having a smaller refractive index thanthe organic light emitting layer 230 and a large difference inrefractive index from the organic light emitting layer 230 is disposedbetween the insulating layer 225 and the organic light emitting layer230. As a result, the display device according to the third modificationcan improve the light extraction efficiency of a light emitting elementby reflecting light emitted from the organic light emitting layer 230 atan interface between the organic light emitting layer 230 and thereflective auxiliary layer 226.

Meanwhile, in the display device according to the third modification,the insulating layer 225 is positively charged. As a result, a negativecharge of the reflective auxiliary layer 226 is cancelled, and holes arenot accumulated at an interface of the organic light emitting layer 130in contact with the reflective auxiliary layer 226. Therefore, a highlyconductive path is not generated. Therefore, the display deviceaccording to the third modification can suppress occurrence of leakageof a drive current between adjacent light emitting elements.

Therefore, the display device according to the third modification canimprove the light extraction efficiency of a light emitting elementwhile suppressing leakage of a drive current between adjacent lightemitting elements.

<3. Application Example of Display Device>

Subsequently, an application example of the display device according tothe first or second embodiment of the present disclosure will bedescribed with reference to FIGS. 19 to 22. Each of FIGS. 19 to 22 is anexternal view illustrating an example of an electronic apparatus towhich the display device according to either one of the embodiments ofthe present disclosure can be applied.

For example, the display device according to either one of theembodiments of the present disclosure can be applied to a display unitof an electronic apparatus such as a smartphone. Specifically, asillustrated in FIG. 19, a smartphone 300 includes a display unit 301that displays various types of information, and an operation unit 303including a button or the like that receives an operation input by auser. Here, the display unit 301 may be constituted by the displaydevice according to either one of the present embodiments.

Furthermore, for example, the display device according to either one ofthe present embodiments can be applied to a display unit of anelectronic apparatus such as a digital camera. Specifically, asillustrated in FIGS. 20 and 21, a digital camera 310 includes a mainbody (camera body) 311, an interchangeable lens unit 313, a grip unit315 held by a user at the time of photographing, a monitor unit 317 thatdisplays various types of information, and an electronic view finder(EVF) 319 that displays a through image observed by a user at the timeof photographing. Note that FIG. 20 illustrates an external appearanceof the digital camera 310 viewed from the front (in other words, anobject side), and FIG. 21 illustrates an external appearance of thedigital camera 310 viewed from the rear (in other words, a photographerside). Here, the monitor unit 317 and the EVF 319 may be constituted bythe display device according to either one of the present embodiments.

Furthermore, for example, the display device according to either one ofthe present embodiments can be applied to a display unit of anelectronic apparatus such as a head mounted display (HMD). Specifically,as illustrated in FIG. 22, the HMD 320 includes a display unit 321 thatdisplays various types of information, and a mounting unit 323 mountedon the head of a user at the time of mounting. Here, the display unit321 may be constituted by the display device according to either one ofthe present embodiments. Moreover, the display device according toeither one of the present embodiments can be applied not only to adisplay unit of a non-transmissive HMD illustrated in FIG. 22 but alsoto a display unit of a transmissive HMD such as a glasses type HMD.

Note that the electronic apparatus to which the display device accordingto either one of the present embodiments can be applied is not limitedto the above examples. The display device according to either one of thepresent embodiments can be applied to a display unit of an electronicapparatus in any field that performs display on the basis of an imagesignal input from the outside or an image signal generated internally.Examples of such an electronic apparatus include a television device, anelectronic book, a personal digital assistant (PDA), a laptop personalcomputer, a video camera, and a game device.

Hitherto, preferable embodiments of the present disclosure have beendescribed in detail with reference to the accompanying drawings, but thetechnical scope of the present disclosure is not limited to suchexamples. It is obvious that a person having ordinary knowledge in thetechnical field to which the present disclosure belongs can conceive ofvarious change examples and modification examples within a range of thetechnical idea described in the claims, and it is understood that thesechange examples and modification examples are naturally within thetechnical scope of the present disclosure.

Furthermore, the effects described in the present specification aremerely illustrative or exemplary, and are not limiting. That is, thetechnique according to the present disclosure can exhibit another effectobvious to those skilled in the art from the description of the presentspecification together with the above effect or in place of the aboveeffect.

Note that the following configurations are also within the technicalscope of the present disclosure.

(1)

A display device including:

a plurality of light emitting elements having an organic light emittinglayer sandwiched between a first electrode disposed for each of thelight emitting elements and a second electrode in a lamination directionand arrayed on a plane; and

an insulating layer disposed between the first electrodes, in which

at least a part of a film thickness region in the insulating layercontains a positively charged inorganic nitride.

(2)

The display device according to (1), in which the first electrode is ananode electrode.

(3)

The display device according to (1) or (2), in which a film thicknessregion containing a positively charged inorganic nitride is a filmthickness region in contact with the organic light emitting layer.

(4)

The display device according to (3), in which

the insulating layer is constituted by a laminated film of a pluralityof insulating films, and

an insulating film in contact with the organic light emitting layeramong the plurality of insulating films contains a positively chargedinorganic nitride.

(5)

The display device according to any one of (1) to (4), in which a sidesurface of the first electrode is covered with the insulating layer.

(6)

The display device according to any one of (1) to (5), in which thesecond electrode and the organic light emitting layer are disposedcontinuously over the light emitting elements.

(7)

The display device according to any one of (1) to (6), in which theinorganic nitride contains no oxygen atom.

(8)

The display device according to (7), in which the inorganic nitride issilicon nitride.

(9)

The display device according to (8), in which a ratio of Si—H/N—H in thesilicon nitride is less than 1%.

(10)

The display device according to any one of (1) to (9), in which each ofthe light emitting elements is disposed inside a recess structure havingthe first electrode as a bottom and having a first member disposedbetween the light emitting elements as a side wall.

(11)

The display device according to (10), in which the first member has asmaller refractive index than the organic light emitting layer.

(12)

The display device according to (10) or (11), in which the insulatinglayer is disposed outside the recess structure and in a region incontact with the organic light emitting layer.

(13)

An electronic apparatus including a display unit including:

a plurality of light emitting elements having an organic light emittinglayer sandwiched between a first electrode disposed for each of thelight emitting elements and a second electrode in a lamination directionand arrayed on a plane; and

an insulating layer disposed between the first electrodes, in which

at least a part of a film thickness region in the insulating layercontains a positively charged inorganic nitride.

REFERENCE SIGNS LIST

-   100, 200 Substrate-   110, 210 First electrode-   111 Contact plug-   120, 220, 221, 223, 225 Insulating layer-   130, 230 Organic light emitting layer-   140, 240 Second electrode-   150, 250 Protective layer-   161, 260 Color filter-   163 Shielding layer-   224, 226 Reflective auxiliary layer-   270 First member-   280 Second member

1. A display device comprising: a plurality of light emitting elementshaving an organic light emitting layer sandwiched between a firstelectrode disposed for each of the light emitting elements and a secondelectrode in a lamination direction and arrayed on a plane; and aninsulating layer disposed between the first electrodes, wherein at leasta part of a film thickness region in the insulating layer contains apositively charged inorganic nitride.
 2. The display device according toclaim 1, wherein the first electrode is an anode electrode.
 3. Thedisplay device according to claim 1, wherein a film thickness regioncontaining a positively charged inorganic nitride is a film thicknessregion in contact with the organic light emitting layer.
 4. The displaydevice according to claim 3, wherein the insulating layer is constitutedby a laminated film of a plurality of insulating films, and aninsulating film in contact with the organic light emitting layer amongthe plurality of insulating films contains a positively chargedinorganic nitride.
 5. The display device according to claim 1, wherein aside surface of the first electrode is covered with the insulatinglayer.
 6. The display device according to claim 1, wherein the secondelectrode and the organic light emitting layer are disposed continuouslyover the light emitting elements.
 7. The display device according toclaim 1, wherein the inorganic nitride contains no oxygen atom.
 8. Thedisplay device according to claim 7, wherein the inorganic nitride issilicon nitride.
 9. The display device according to claim 8, wherein aratio of Si—H/N—H in the silicon nitride is less than 1%.
 10. Thedisplay device according to claim 1, wherein each of the light emittingelements is disposed inside a recess structure having the firstelectrode as a bottom and having a first member disposed between thelight emitting elements as a side wall.
 11. The display device accordingto claim 10, wherein the first member has a smaller refractive indexthan the organic light emitting layer.
 12. The display device accordingto claim 10, wherein the insulating layer is disposed outside the recessstructure and in a region in contact with the organic light emittinglayer.
 13. An electronic apparatus comprising a display unit including:a plurality of light emitting elements having an organic light emittinglayer sandwiched between a first electrode disposed for each of thelight emitting elements and a second electrode in a lamination directionand arrayed on a plane; and an insulating layer disposed between thefirst electrodes, wherein at least a part of a film thickness region inthe insulating layer contains a positively charged inorganic nitride.